Ultrahigh-temperature microwave annealing of Al⁺- And P ⁺-implanted 4H-SiC

Engineering

• Surface Layer 100%
• Dopants 50%
• Annealing Temperature 50%
• Nitride 50%
• Ray Photoelectron Spectroscopy 50%
• Atomic Force Microscopy 50%
• Sheet Resistance 50%
• Temperature Range 50%
• Silicon and Silicon Oxide 50%
• Sample Temperature 50%
• Rate of Heating 50%
• Smooth Surface 50%

Physics

• Surface Layers 100%
• X Ray Spectroscopy 50%
• Backscattering 50%
• Silicon Nitride 50%
• Atomic Force Microscopy 50%
• Secondary Ion Mass Spectrometry 50%
• Silicon Oxide 50%

Material Science

• Annealing 100%
• Silicon 40%
• Oxide Compound 20%
• Doping (Additives) 20%
• Silicon Nitride 20%
• Electron Mobility 20%
• X-Ray Photoelectron Spectroscopy 20%
• Secondary Ion Mass Spectrometry 20%
• Hole Mobility 20%