Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films

R. P. Wang; H. Muto; X. Gang; P. Jin; M. Tazawa

doi:10.1016/j.jcrysgro.2005.05.019

Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films

R. P. Wang^*, H. Muto, X. Gang, P. Jin, M. Tazawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have prepared high-quality zinc oxide (ZnO) films by using laser ablation and magnetron sputtering. The deep-level emission free spectra have been obtained for ZnO films on both sapphire and fused silica. It was found that the stimulated emission and band-edge emission were sensitive to the quality of the ZnO films. Strong band-edge emission can be achieved and the stimulated emission can be excited at low threshold excitation density of 7 W/cm ² in single crystal ZnO films. By using special devised optical geometry, we have proved that the traditional resonant cavity is not imperative to form the lasing and that in-plane closed loop paths via multiple scattering between crystalline grains seems more suitable to account for the lasing mechanism.

Original language	English
Pages (from-to)	359-364
Number of pages	6
Journal	Journal of Crystal Growth
Volume	282
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.05.019
Publication status	Published - 1 Sept 2005

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10.1016/j.jcrysgro.2005.05.019

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title = "Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films",

abstract = "We have prepared high-quality zinc oxide (ZnO) films by using laser ablation and magnetron sputtering. The deep-level emission free spectra have been obtained for ZnO films on both sapphire and fused silica. It was found that the stimulated emission and band-edge emission were sensitive to the quality of the ZnO films. Strong band-edge emission can be achieved and the stimulated emission can be excited at low threshold excitation density of 7 W/cm 2 in single crystal ZnO films. By using special devised optical geometry, we have proved that the traditional resonant cavity is not imperative to form the lasing and that in-plane closed loop paths via multiple scattering between crystalline grains seems more suitable to account for the lasing mechanism.",

keywords = "A3. Laser epitaxy, B1. Zinc compounds, B2. Semiconducting II-VI materials",

author = "Wang, {R. P.} and H. Muto and X. Gang and P. Jin and M. Tazawa",

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T1 - Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films

AU - Wang, R. P.

AU - Muto, H.

AU - Gang, X.

AU - Jin, P.

AU - Tazawa, M.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We have prepared high-quality zinc oxide (ZnO) films by using laser ablation and magnetron sputtering. The deep-level emission free spectra have been obtained for ZnO films on both sapphire and fused silica. It was found that the stimulated emission and band-edge emission were sensitive to the quality of the ZnO films. Strong band-edge emission can be achieved and the stimulated emission can be excited at low threshold excitation density of 7 W/cm 2 in single crystal ZnO films. By using special devised optical geometry, we have proved that the traditional resonant cavity is not imperative to form the lasing and that in-plane closed loop paths via multiple scattering between crystalline grains seems more suitable to account for the lasing mechanism.

AB - We have prepared high-quality zinc oxide (ZnO) films by using laser ablation and magnetron sputtering. The deep-level emission free spectra have been obtained for ZnO films on both sapphire and fused silica. It was found that the stimulated emission and band-edge emission were sensitive to the quality of the ZnO films. Strong band-edge emission can be achieved and the stimulated emission can be excited at low threshold excitation density of 7 W/cm 2 in single crystal ZnO films. By using special devised optical geometry, we have proved that the traditional resonant cavity is not imperative to form the lasing and that in-plane closed loop paths via multiple scattering between crystalline grains seems more suitable to account for the lasing mechanism.

KW - A3. Laser epitaxy

KW - B1. Zinc compounds

KW - B2. Semiconducting II-VI materials

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U2 - 10.1016/j.jcrysgro.2005.05.019

DO - 10.1016/j.jcrysgro.2005.05.019

M3 - Article

SN - 0022-0248

VL - 282

SP - 359

EP - 364

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films

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