Understanding the kink formation in GaAs/InAs heterostructural nanowires

M. Paladugu; J. Zou; H. Wang; G. J. Auchterlonie; Y. Kim; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/ICONN.2006.340689

Understanding the kink formation in GaAs/InAs heterostructural nanowires

M. Paladugu, J. Zou^*, H. Wang, G. J. Auchterlonie, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Abstract

The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques.

Original language	English
Title of host publication	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN
Pages	600-603
Number of pages	4
DOIs	https://doi.org/10.1109/ICONN.2006.340689
Publication status	Published - 2006
Event	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 - Brisbane, Australia Duration: 3 Jul 2006 → 6 Jul 2006

Publication series

Name	Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

Conference

Conference	2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006
Country/Territory	Australia
City	Brisbane
Period	3/07/06 → 6/07/06

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10.1109/ICONN.2006.340689

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Paladugu, M., Zou, J., Wang, H., Auchterlonie, G. J., Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H., & Jagadish, C. (2006). Understanding the kink formation in GaAs/InAs heterostructural nanowires. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN (pp. 600-603). Article 4143469 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). https://doi.org/10.1109/ICONN.2006.340689

@inproceedings{49a6ebb5438c483b92cc04d345c5c0ed,

title = "Understanding the kink formation in GaAs/InAs heterostructural nanowires",

abstract = "The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques.",

keywords = "Axial nanowire heterostructure, GaAs, Heterostrucural nanowire, InAs, Kink, Nanowire, SEM, TEM",

author = "M. Paladugu and J. Zou and H. Wang and Auchterlonie, {G. J.} and Y. Kim and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2006",

doi = "10.1109/ICONN.2006.340689",

language = "English",

isbn = "1424404533",

series = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

pages = "600--603",

booktitle = "Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN",

note = "2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006 ; Conference date: 03-07-2006 Through 06-07-2006",

}

Paladugu, M, Zou, J, Wang, H, Auchterlonie, GJ, Kim, Y, Joyce, HJ, Gao, Q, Tan, HH & Jagadish, C 2006, Understanding the kink formation in GaAs/InAs heterostructural nanowires. in Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN., 4143469, Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN, pp. 600-603, 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006, Brisbane, Australia, 3/07/06. https://doi.org/10.1109/ICONN.2006.340689

Understanding the kink formation in GaAs/InAs heterostructural nanowires. / Paladugu, M.; Zou, J.; Wang, H. et al.
Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 600-603 4143469 (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Understanding the kink formation in GaAs/InAs heterostructural nanowires

AU - Paladugu, M.

AU - Zou, J.

AU - Wang, H.

AU - Auchterlonie, G. J.

AU - Kim, Y.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006

Y1 - 2006

N2 - The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques.

AB - The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques.

KW - Axial nanowire heterostructure

KW - GaAs

KW - Heterostrucural nanowire

KW - InAs

KW - Kink

KW - Nanowire

KW - SEM

KW - TEM

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U2 - 10.1109/ICONN.2006.340689

DO - 10.1109/ICONN.2006.340689

M3 - Conference contribution

SN - 1424404533

SN - 9781424404537

T3 - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

SP - 600

EP - 603

BT - Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN

T2 - 2006 International Conference on Nanoscience and Nanotechnology, ICONN 2006

Y2 - 3 July 2006 through 6 July 2006

ER -

Paladugu M, Zou J, Wang H, Auchterlonie GJ, Kim Y, Joyce HJ et al. Understanding the kink formation in GaAs/InAs heterostructural nanowires. In Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN. 2006. p. 600-603. 4143469. (Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology, ICONN). doi: 10.1109/ICONN.2006.340689

Understanding the kink formation in GaAs/InAs heterostructural nanowires

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