Understanding the rotational excitation in scattering of D2 from CH3-Si(111)

C. Díaz, A. S. Muzas, M. Del Cueto, T. J. Frankcombe, F. Martín, Z. M. Hund, K. J. Nihill, S. J. Sibener

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    We have studied the origin of the striking rotational excitation probability, found experimentally, for D2 upon scattering from a organic-terminated Si(111) surface.

    Original languageEnglish
    Article number032007
    JournalJournal of Physics: Conference Series
    Volume635
    Issue number3
    DOIs
    Publication statusPublished - 7 Sept 2015
    Event29th International Conference on Photonic, Electronic and Atomic Collisions, ICPEAC 2015 - Toledo, Spain
    Duration: 22 Jul 201528 Jul 2015

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