Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

W. Sun; Y. N. Guo; H. Y. Xu; Z. M. Liao; J. Zou; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472403

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

W. Sun, Y. N. Guo, H. Y. Xu, Z. M. Liao, J. Zou^*, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	147-148
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472403
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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Sun, W., Guo, Y. N., Xu, H. Y., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H., & Jagadish, C. (2012). Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 147-148). Article 6472403 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472403

@inproceedings{b0162db558f44c9aa271af055575a7e6,

title = "Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs",

abstract = "In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.",

author = "W. Sun and Guo, {Y. N.} and Xu, {H. Y.} and Liao, {Z. M.} and J. Zou and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472403",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "147--148",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Sun, W, Guo, YN, Xu, HY, Liao, ZM, Zou, J, Gao, Q, Tan, HH & Jagadish, C 2012, Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472403, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 147-148, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472403

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. / Sun, W.; Guo, Y. N.; Xu, H. Y. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 147-148 6472403 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

AU - Sun, W.

AU - Guo, Y. N.

AU - Xu, H. Y.

AU - Liao, Z. M.

AU - Zou, J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

AB - In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

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U2 - 10.1109/COMMAD.2012.6472403

DO - 10.1109/COMMAD.2012.6472403

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 147

EP - 148

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Sun W, Guo YN, Xu HY, Liao ZM, Zou J, Gao Q et al. Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 147-148. 6472403. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472403

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

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