Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

W. Sun; Y. N. Guo; H. Y. Xu; Z. M. Liao; J. Zou; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472403

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

W. Sun, Y. N. Guo, H. Y. Xu, Z. M. Liao, J. Zou^*, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

1 Citation (Scopus)

Abstract

In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Publisher	IEEE
Pages	147-148
Number of pages	2
ISBN (Print)	9781467330459
DOIs	https://doi.org/10.1109/COMMAD.2012.6472403
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472403

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@inproceedings{b0162db558f44c9aa271af055575a7e6,

title = "Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs",

abstract = "In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.",

author = "W. Sun and Guo, \{Y. N.\} and Xu, \{H. Y.\} and Liao, \{Z. M.\} and J. Zou and Q. Gao and Tan, \{H. H.\} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472403",

language = "English",

isbn = "9781467330459",

pages = "147--148",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

publisher = "IEEE",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Sun, W, Guo, YN, Xu, HY, Liao, ZM, Zou, J, Gao, Q, Tan, HH & Jagadish, C 2012, Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. IEEE, pp. 147-148, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472403

TY - GEN

T1 - Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

AU - Sun, W.

AU - Guo, Y. N.

AU - Xu, H. Y.

AU - Liao, Z. M.

AU - Zou, J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

AB - In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

UR - https://www.scopus.com/pages/publications/84875590107

U2 - 10.1109/COMMAD.2012.6472403

DO - 10.1109/COMMAD.2012.6472403

M3 - Conference Paper

SN - 9781467330459

SP - 147

EP - 148

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

PB - IEEE

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

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