Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition

Wen Sun; Ya Nan Guo; Hong Yi Xu; Zhi Ming Liao; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish; Jin Zou

doi:10.1021/jp406294t

Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}_B by metal-organic chemical vapor deposition

Wen Sun, Ya Nan Guo, Hong Yi Xu, Zhi Ming Liao, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Jin Zou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated.

Original language	English
Pages (from-to)	19234-19238
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	117
Issue number	37
DOIs	https://doi.org/10.1021/jp406294t
Publication status	Published - 19 Sept 2013

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title = "Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition",

abstract = "In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated.",

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T1 - Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}B by metal-organic chemical vapor deposition

AU - Sun, Wen

AU - Guo, Ya Nan

AU - Xu, Hong Yi

AU - Liao, Zhi Ming

AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Zou, Jin

PY - 2013/9/19

Y1 - 2013/9/19

N2 - In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated.

AB - In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated.

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DO - 10.1021/jp406294t

M3 - Article

SN - 1932-7447

VL - 117

SP - 19234

EP - 19238

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 37

ER -

Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}_B by metal-organic chemical vapor deposition

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