Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111}_B by metal-organic chemical vapor deposition

In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously grown planar layer and (2) the higher growth temperature leads to a higher P concentration in ternary nanowires. We anticipate that the minimization of misfit strain between the GaAsP layer and its underlying GaAs substrate and the complexity of precursor decomposition are responsible for the observed varied P concentrations. These findings implicate that the compositional control in ternary GaAsP nanowires is much more complicated than anticipated.