Unexpected benefits of rapid growth rate for III-V nanowires

Hannah J. Joyce; Qiang Gao; H. Hoe Tan; Chennupati Jagadish; Yong Kim; Melodie A. Fickenscher; Saranga Perera; Thang Ba Hoang; Leigh M. Smith; Howard E. Jackson; Jan M. Yarrison-Rice; Xin Zhang; Jin Zou

doi:10.1021/nl803182c

Unexpected benefits of rapid growth rate for III-V nanowires

Hannah J. Joyce, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Yong Kim, Melodie A. Fickenscher, Saranga Perera, Thang Ba Hoang, Leigh M. Smith, Howard E. Jackson, Jan M. Yarrison-Rice, Xin Zhang, Jin Zou

Research output: Contribution to journal › Article › peer-review

130 Citations (Scopus)

Abstract

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographlc quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowlre growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographlc defects, and have very high purity with minimal Intrinsic dopant Incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal Intriguing behavior In the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

Original language	English
Pages (from-to)	695-701
Number of pages	7
Journal	Nano Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1021/nl803182c
Publication status	Published - 11 Feb 2009

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title = "Unexpected benefits of rapid growth rate for III-V nanowires",

abstract = "In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographlc quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowlre growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographlc defects, and have very high purity with minimal Intrinsic dopant Incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal Intriguing behavior In the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.",

author = "Joyce, {Hannah J.} and Qiang Gao and Tan, {H. Hoe} and Chennupati Jagadish and Yong Kim and Fickenscher, {Melodie A.} and Saranga Perera and Hoang, {Thang Ba} and Smith, {Leigh M.} and Jackson, {Howard E.} and Yarrison-Rice, {Jan M.} and Xin Zhang and Jin Zou",

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doi = "10.1021/nl803182c",

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journal = "Nano Letters",

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T1 - Unexpected benefits of rapid growth rate for III-V nanowires

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

AU - Kim, Yong

AU - Fickenscher, Melodie A.

AU - Perera, Saranga

AU - Hoang, Thang Ba

AU - Smith, Leigh M.

AU - Jackson, Howard E.

AU - Yarrison-Rice, Jan M.

AU - Zhang, Xin

AU - Zou, Jin

PY - 2009/2/11

Y1 - 2009/2/11

N2 - In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographlc quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowlre growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographlc defects, and have very high purity with minimal Intrinsic dopant Incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal Intriguing behavior In the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

AB - In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographlc quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowlre growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographlc defects, and have very high purity with minimal Intrinsic dopant Incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal Intriguing behavior In the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

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U2 - 10.1021/nl803182c

DO - 10.1021/nl803182c

M3 - Article

SN - 1530-6984

VL - 9

SP - 695

EP - 701

JO - Nano Letters

JF - Nano Letters

IS - 2

ER -

Unexpected benefits of rapid growth rate for III-V nanowires

Abstract

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