@inproceedings{db9be431c4d44a1487de73a980588985,
title = "Unravelling the Origins of Contact Recombination for Localized Laser-Doped Contacts",
abstract = " Both localized laser-doping and contact opening are utilized in fabrication of high-efficiency solar cell devices. In this work, we present an experimental method to separate the origins of the lumped recombination parameter for localized contacts. We attribute the main source of recombination after laser doping to small edges around the laser-processed regions (j0, ≈ 10,000 fA/cm 2 ), while the center areas have a non-negligible contribution (j0,a ≈ 2,000-3,000 fA/cm 2 ). Both contributions can be significantly reduced by annealing.",
keywords = "Recombination, edge recombination, laser ablation, laser doping, silicon",
author = "Marco Ernst and Huyeng, {Jonas D.} and Daniel Walter and Fong, {Kean Chern} and Andrew Blakers",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = nov,
day = "26",
doi = "10.1109/PVSC.2018.8547383",
language = "English",
series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2195--2199",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
address = "United States",
}