Abstract
Subband-gap photoconductivity of InP: Cu has been investigated. An exponential dependence versus photon energy has been found. Our findings are in contrast to Fowler plots measured in GaAs : As. In our opinion, the exponential dependence is determined by photogeneration from the semiconductor. This mechanism of carrier generation is stronger than the photoemission from metal precipitates.
Original language | English |
---|---|
Pages (from-to) | 475-477 |
Number of pages | 3 |
Journal | Physica Status Solidi (A) Applied Research |
Volume | 168 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1998 |