Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

S. J. Pearton; F. Ren; J. R. Lothian; T. R. Fullowan; A. Katz; P. W. Wisk; C. R. Abernathy; R. F. Kopf; R. G. Elliman; M. C. Ridgway; C. Jagadish; J. S. Williams

doi:10.1063/1.350643

Use of MeV O⁺ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

S. J. Pearton^*, F. Ren, J. R. Lothian, T. R. Fullowan, A. Katz, P. W. Wisk, C. R. Abernathy, R. F. Kopf, R. G. Elliman, M. C. Ridgway, C. Jagadish, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O⁺ ions are reported. High (∼10⁸ Ω/D'Alembertian sign) sheet resistances are obtained in such layers following annealing at 550-600 °C for ion doses around 10¹⁵ cm^-2. The residual conductivity is still due to hopping processes with small activation (50-70 meV) energies. The use of a single MeV O⁺ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm ²) HBTs with gains of 25 for highly-doped (p=7×10¹⁹ cm^-3) base layer structures have been fabricated using MeV implant isolation.

Original language	English
Pages (from-to)	4949-4954
Number of pages	6
Journal	Journal of Applied Physics
Volume	71
Issue number	10
DOIs	https://doi.org/10.1063/1.350643
Publication status	Published - 1992

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@article{19ec637ac7b54e1da12239d61fab2a6c,

title = "Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors",

abstract = "The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/D'Alembertian sign) sheet resistances are obtained in such layers following annealing at 550-600 °C for ion doses around 1015 cm-2. The residual conductivity is still due to hopping processes with small activation (50-70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm 2) HBTs with gains of 25 for highly-doped (p=7×1019 cm-3) base layer structures have been fabricated using MeV implant isolation.",

author = "Pearton, \{S. J.\} and F. Ren and Lothian, \{J. R.\} and Fullowan, \{T. R.\} and A. Katz and Wisk, \{P. W.\} and Abernathy, \{C. R.\} and Kopf, \{R. F.\} and Elliman, \{R. G.\} and Ridgway, \{M. C.\} and C. Jagadish and Williams, \{J. S.\}",

year = "1992",

doi = "10.1063/1.350643",

language = "English",

volume = "71",

pages = "4949--4954",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

AU - Pearton, S. J.

AU - Ren, F.

AU - Lothian, J. R.

AU - Fullowan, T. R.

AU - Katz, A.

AU - Wisk, P. W.

AU - Abernathy, C. R.

AU - Kopf, R. F.

AU - Elliman, R. G.

AU - Ridgway, M. C.

AU - Jagadish, C.

AU - Williams, J. S.

PY - 1992

Y1 - 1992

N2 - The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/D'Alembertian sign) sheet resistances are obtained in such layers following annealing at 550-600 °C for ion doses around 1015 cm-2. The residual conductivity is still due to hopping processes with small activation (50-70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm 2) HBTs with gains of 25 for highly-doped (p=7×1019 cm-3) base layer structures have been fabricated using MeV implant isolation.

AB - The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/D'Alembertian sign) sheet resistances are obtained in such layers following annealing at 550-600 °C for ion doses around 1015 cm-2. The residual conductivity is still due to hopping processes with small activation (50-70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm 2) HBTs with gains of 25 for highly-doped (p=7×1019 cm-3) base layer structures have been fabricated using MeV implant isolation.

UR - http://www.scopus.com/inward/record.url?scp=0040632553&partnerID=8YFLogxK

U2 - 10.1063/1.350643

DO - 10.1063/1.350643

M3 - Article

AN - SCOPUS:0040632553

SN - 0021-8979

VL - 71

SP - 4949

EP - 4954

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Use of MeV O⁺ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

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