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Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors
S. J. Pearton*, F. Ren, J. R. Lothian, T. R. Fullowan, A. Katz, P. W. Wisk, C. R. Abernathy, R. F. Kopf, R. G. Elliman, M. C. Ridgway, C. Jagadish, J. S. Williams
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
19
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(Scopus)