Vacancy and interstitial depth profiles in ion-implanted silicon

P. Lévêque; H. Kortegaard Nielsen; P. Pellegrino; A. Hallén; B. G. Svensson; A. Yu Kuznetsov; J. Wong-Leung; C. Jagadish; V. Privitera

doi:10.1063/1.1528304

Vacancy and interstitial depth profiles in ion-implanted silicon

P. Lévêque^*, H. Kortegaard Nielsen, P. Pellegrino, A. Hallén, B. G. Svensson, A. Yu Kuznetsov, J. Wong-Leung, C. Jagadish, V. Privitera

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.

Original language	English
Pages (from-to)	871-877
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.1528304
Publication status	Published - 15 Jan 2003

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abstract = "The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.",

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AU - Lévêque, P.

AU - Kortegaard Nielsen, H.

AU - Pellegrino, P.

AU - Hallén, A.

AU - Svensson, B. G.

AU - Kuznetsov, A. Yu

AU - Wong-Leung, J.

AU - Jagadish, C.

AU - Privitera, V.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.

AB - The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.

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DO - 10.1063/1.1528304

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VL - 93

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Vacancy and interstitial depth profiles in ion-implanted silicon

Abstract

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