Vacancy and interstitial depth profiles in ion-implanted silicon

P. Lévêque; H. Kortegaard Nielsen; P. Pellegrino; A. Hallén; B. G. Svensson; A. Yu Kuznetsov; J. Wong-Leung; C. Jagadish; V. Privitera

doi:10.1063/1.1528304

Vacancy and interstitial depth profiles in ion-implanted silicon

P. Lévêque^*
, H. Kortegaard Nielsen
, P. Pellegrino
, A. Hallén
, B. G. Svensson
, A. Yu Kuznetsov
, J. Wong-Leung
, C. Jagadish
, V. Privitera

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.

Original language	English
Pages (from-to)	871-877
Number of pages	7
Journal	Journal of Applied Physics
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.1528304
Publication status	Published - 15 Jan 2003

Access to Document

10.1063/1.1528304

Cite this

@article{9d2201f88b0941a68492f3ed2e3e8bcc,

title = "Vacancy and interstitial depth profiles in ion-implanted silicon",

abstract = "The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.",

author = "P. L{\'e}v{\^e}que and \{Kortegaard Nielsen\}, H. and P. Pellegrino and A. Hall{\'e}n and Svensson, \{B. G.\} and Kuznetsov, \{A. Yu\} and J. Wong-Leung and C. Jagadish and V. Privitera",

year = "2003",

month = jan,

day = "15",

doi = "10.1063/1.1528304",

language = "English",

volume = "93",

pages = "871--877",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Vacancy and interstitial depth profiles in ion-implanted silicon

AU - Lévêque, P.

AU - Kortegaard Nielsen, H.

AU - Pellegrino, P.

AU - Hallén, A.

AU - Svensson, B. G.

AU - Kuznetsov, A. Yu

AU - Wong-Leung, J.

AU - Jagadish, C.

AU - Privitera, V.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.

AB - The shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion implantation silicon were demonstrated. The effect of the angle of ion incidence was investigated. Point defects were introduced in lightly doped float zone n-type silicon by implantation with 6.8 MeV boron ions and 680 keV and 1.3 MeV protons at room temperature.

UR - https://www.scopus.com/pages/publications/0037439457

U2 - 10.1063/1.1528304

DO - 10.1063/1.1528304

M3 - Article

SN - 0021-8979

VL - 93

SP - 871

EP - 877

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Vacancy and interstitial depth profiles in ion-implanted silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this