Variable temperature hall-effect measurements in ion bombarded InP

G. C. Pesenti; H. Boudinov; C. Carmody; C. Jagadish

doi:10.1016/j.nimb.2003.12.062

Variable temperature hall-effect measurements in ion bombarded InP

G. C. Pesenti^*, H. Boudinov, C. Carmody, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Fe doped semi-insulating and p-type InP were implanted with P⁺ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal annealing system. Variable temperature (12-300 K) Hall-effect measurements have been used for characteristic defect energy level extraction. A large amount of negative free carriers have been observed after the thermal treatments. These electrons are attributed to the creation of P_In antisite defects with an energy level above the minimum of the conduction band.

Original language	English
Pages (from-to)	386-390
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	218
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2003.12.062
Publication status	Published - Jun 2004
Event	Proceedings of the Twelfth International Conference on Radiation - Gramado, Brazil Duration: 31 Aug 2003 → 5 Sept 2003

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@article{61396290e41f4ca58c54ea164157b5df,

title = "Variable temperature hall-effect measurements in ion bombarded InP",

abstract = "Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal annealing system. Variable temperature (12-300 K) Hall-effect measurements have been used for characteristic defect energy level extraction. A large amount of negative free carriers have been observed after the thermal treatments. These electrons are attributed to the creation of PIn antisite defects with an energy level above the minimum of the conduction band.",

keywords = "Hall effect, InP, Ion bombardment, Mobility, Variable temperature",

author = "Pesenti, {G. C.} and H. Boudinov and C. Carmody and C. Jagadish",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2003.12.062",

language = "English",

volume = "218",

pages = "386--390",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Twelfth International Conference on Radiation ; Conference date: 31-08-2003 Through 05-09-2003",

}

TY - JOUR

T1 - Variable temperature hall-effect measurements in ion bombarded InP

AU - Pesenti, G. C.

AU - Boudinov, H.

AU - Carmody, C.

AU - Jagadish, C.

PY - 2004/6

Y1 - 2004/6

N2 - Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal annealing system. Variable temperature (12-300 K) Hall-effect measurements have been used for characteristic defect energy level extraction. A large amount of negative free carriers have been observed after the thermal treatments. These electrons are attributed to the creation of PIn antisite defects with an energy level above the minimum of the conduction band.

AB - Fe doped semi-insulating and p-type InP were implanted with P+ ions to produce an excess of phosphorous atoms in the order of 0.1 at.%. Subsequent annealing in Ar ambient in the temperature interval 400-600 °C was performed for 30 s in a rapid thermal annealing system. Variable temperature (12-300 K) Hall-effect measurements have been used for characteristic defect energy level extraction. A large amount of negative free carriers have been observed after the thermal treatments. These electrons are attributed to the creation of PIn antisite defects with an energy level above the minimum of the conduction band.

KW - Hall effect

KW - InP

KW - Ion bombardment

KW - Mobility

KW - Variable temperature

UR - http://www.scopus.com/inward/record.url?scp=2342615542&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2003.12.062

DO - 10.1016/j.nimb.2003.12.062

M3 - Conference article

SN - 0168-583X

VL - 218

SP - 386

EP - 390

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Proceedings of the Twelfth International Conference on Radiation

Y2 - 31 August 2003 through 5 September 2003

ER -

Variable temperature hall-effect measurements in ion bombarded InP

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