Variation of ion-irradiation induced strain as a function of ion fluence in Si

L. Raghu; S. Hatt; P. Kluth; S. M. Kluth; R. Dogra; M. C. Ridgway

doi:10.1016/j.nimb.2007.01.007

Variation of ion-irradiation induced strain as a function of ion fluence in Si

L. Raghu^*, S. Hatt, P. Kluth, S. M. Kluth, R. Dogra, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-ray diffraction (DCXRD). Strain in the Si surface layer was determined by modeling the DCXRD rocking curve using the program Rocking curve Analysis by Dynamic Simulation (RADS) where a generated strain profile is iteratively fitted to the measured rocking curve. The strain was tensile, resulting from a vacancy excess, and measured as a function of irradiation temperature and ion fluence. For a given temperature, strain increased as a function of ion fluence until a strain maximum was attained and then relaxed via dislocation formation. The maximum strain attainable decreased with an increase in irradiation temperature as consistent with thermally activated dislocation formation.

Original language	English
Pages (from-to)	236-239
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	257
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2007.01.007
Publication status	Published - Apr 2007

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@article{86b443bc01ce48d3b32c3dde22009603,

title = "Variation of ion-irradiation induced strain as a function of ion fluence in Si",

abstract = "Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-ray diffraction (DCXRD). Strain in the Si surface layer was determined by modeling the DCXRD rocking curve using the program Rocking curve Analysis by Dynamic Simulation (RADS) where a generated strain profile is iteratively fitted to the measured rocking curve. The strain was tensile, resulting from a vacancy excess, and measured as a function of irradiation temperature and ion fluence. For a given temperature, strain increased as a function of ion fluence until a strain maximum was attained and then relaxed via dislocation formation. The maximum strain attainable decreased with an increase in irradiation temperature as consistent with thermally activated dislocation formation.",

keywords = "Double-crystal X-ray diffraction (DCXRD), Ion implantation, Rutherford backscattering spectrometry by channeling (RBS/C), Strain, Vacancy excess",

author = "L. Raghu and S. Hatt and P. Kluth and Kluth, {S. M.} and R. Dogra and Ridgway, {M. C.}",

year = "2007",

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doi = "10.1016/j.nimb.2007.01.007",

language = "English",

volume = "257",

pages = "236--239",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Variation of ion-irradiation induced strain as a function of ion fluence in Si

AU - Raghu, L.

AU - Hatt, S.

AU - Kluth, P.

AU - Kluth, S. M.

AU - Dogra, R.

AU - Ridgway, M. C.

PY - 2007/4

Y1 - 2007/4

N2 - Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-ray diffraction (DCXRD). Strain in the Si surface layer was determined by modeling the DCXRD rocking curve using the program Rocking curve Analysis by Dynamic Simulation (RADS) where a generated strain profile is iteratively fitted to the measured rocking curve. The strain was tensile, resulting from a vacancy excess, and measured as a function of irradiation temperature and ion fluence. For a given temperature, strain increased as a function of ion fluence until a strain maximum was attained and then relaxed via dislocation formation. The maximum strain attainable decreased with an increase in irradiation temperature as consistent with thermally activated dislocation formation.

AB - Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-ray diffraction (DCXRD). Strain in the Si surface layer was determined by modeling the DCXRD rocking curve using the program Rocking curve Analysis by Dynamic Simulation (RADS) where a generated strain profile is iteratively fitted to the measured rocking curve. The strain was tensile, resulting from a vacancy excess, and measured as a function of irradiation temperature and ion fluence. For a given temperature, strain increased as a function of ion fluence until a strain maximum was attained and then relaxed via dislocation formation. The maximum strain attainable decreased with an increase in irradiation temperature as consistent with thermally activated dislocation formation.

KW - Double-crystal X-ray diffraction (DCXRD)

KW - Ion implantation

KW - Rutherford backscattering spectrometry by channeling (RBS/C)

KW - Strain

KW - Vacancy excess

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U2 - 10.1016/j.nimb.2007.01.007

DO - 10.1016/j.nimb.2007.01.007

M3 - Article

SN - 0168-583X

VL - 257

SP - 236

EP - 239

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Variation of ion-irradiation induced strain as a function of ion fluence in Si

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