Variation of ion-irradiation induced strain as a function of ion fluence in Si

L. Raghu*, S. Hatt, P. Kluth, S. M. Kluth, R. Dogra, M. C. Ridgway

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-ray diffraction (DCXRD). Strain in the Si surface layer was determined by modeling the DCXRD rocking curve using the program Rocking curve Analysis by Dynamic Simulation (RADS) where a generated strain profile is iteratively fitted to the measured rocking curve. The strain was tensile, resulting from a vacancy excess, and measured as a function of irradiation temperature and ion fluence. For a given temperature, strain increased as a function of ion fluence until a strain maximum was attained and then relaxed via dislocation formation. The maximum strain attainable decreased with an increase in irradiation temperature as consistent with thermally activated dislocation formation.

    Original languageEnglish
    Pages (from-to)236-239
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Issue number1-2 SPEC. ISS.
    Publication statusPublished - Apr 2007


    Dive into the research topics of 'Variation of ion-irradiation induced strain as a function of ion fluence in Si'. Together they form a unique fingerprint.

    Cite this