Vertical integration of dual wavelength index guided lasers

F. Karouta; H. H. Tan; C. Jagadish; B. H. Van Roy

doi:10.1049/el:19990554

Vertical integration of dual wavelength index guided lasers

F. Karouta^*, H. H. Tan, C. Jagadish, B. H. Van Roy

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The vertical integration of two GaAs-based lasers operating at different wavelengths has been achieved with the use of re-growth technology. A V-channel substrate inner stripe structure was used for the bottom laser and a ridge waveguide for the top laser. Both lasers shared a common electrode and can be powered independently or simultaneously. This represents a promising method for fabricating integrated lasers with different wavelengths.

Original language	English
Pages (from-to)	815-817
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1049/el:19990554
Publication status	Published - 13 May 1999

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title = "Vertical integration of dual wavelength index guided lasers",

abstract = "The vertical integration of two GaAs-based lasers operating at different wavelengths has been achieved with the use of re-growth technology. A V-channel substrate inner stripe structure was used for the bottom laser and a ridge waveguide for the top laser. Both lasers shared a common electrode and can be powered independently or simultaneously. This represents a promising method for fabricating integrated lasers with different wavelengths.",

author = "F. Karouta and Tan, \{H. H.\} and C. Jagadish and \{Van Roy\}, \{B. H.\}",

year = "1999",

month = may,

day = "13",

doi = "10.1049/el:19990554",

language = "English",

volume = "35",

pages = "815--817",

journal = "Electronics Letters",

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T1 - Vertical integration of dual wavelength index guided lasers

AU - Karouta, F.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Van Roy, B. H.

PY - 1999/5/13

Y1 - 1999/5/13

N2 - The vertical integration of two GaAs-based lasers operating at different wavelengths has been achieved with the use of re-growth technology. A V-channel substrate inner stripe structure was used for the bottom laser and a ridge waveguide for the top laser. Both lasers shared a common electrode and can be powered independently or simultaneously. This represents a promising method for fabricating integrated lasers with different wavelengths.

AB - The vertical integration of two GaAs-based lasers operating at different wavelengths has been achieved with the use of re-growth technology. A V-channel substrate inner stripe structure was used for the bottom laser and a ridge waveguide for the top laser. Both lasers shared a common electrode and can be powered independently or simultaneously. This represents a promising method for fabricating integrated lasers with different wavelengths.

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U2 - 10.1049/el:19990554

DO - 10.1049/el:19990554

M3 - Article

SN - 0013-5194

VL - 35

SP - 815

EP - 817

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Vertical integration of dual wavelength index guided lasers

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