Vertically standing Ge nanowires on GaAs(110) substrates

Man Suk Song, Jae Hun Jung, Yong Kim, Y. Wang, J. Zou, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)

    Abstract

    The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly along the direction. Using this unique property, vertical Ge nanowires epitaxially grown on GaAs(110) surface are realized. In addition, these Ge nanowires exhibit minimal tapering and uniform diameters, regardless of growth temperatures, which is an advantageous property for device applications. Ge nanowires growing along the directions are particularly attractive candidates for forming nanobridge devices on conventional (100) surfaces.

    Original languageEnglish
    Article number125602
    JournalNanotechnology
    Volume19
    Issue number12
    DOIs
    Publication statusPublished - 26 Mar 2008

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