Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Xingquan Liu; Wei Lu; Xiaoshuang Chen; S. C. Shen; H. H. Tan; S. Yuan; C. Jagadish; M. B. Johnston; L. V. Dao; M. Gal; J. Zou; D. J.H. Cockayne

doi:10.1063/1.372051

Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Xingquan Liu^*, Wei Lu, Xiaoshuang Chen, S. C. Shen, H. H. Tan, S. Yuan, C. Jagadish, M. B. Johnston, L. V. Dao, M. Gal, J. Zou, D. J.H. Cockayne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Intermixing induced by selective implantation was used to modify the two-dimensional (2D) quantum wells in the V-grooved quantum wire structure. Photoluminescence measurement of the implanted samples shows the obvious blueshift of the interband transition energy while quantum wire is not influenced by implantation. So the selective implantation method has been demonstrated in this article as a useful technique to isolate the energy levels of quantum wire structure from its neighbor 2D structures, which is preferred for the optoelectronic device application of quantum wire.

Original language	English
Pages (from-to)	1566-1568
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.372051
Publication status	Published - Feb 2000

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title = "Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing",

abstract = "Intermixing induced by selective implantation was used to modify the two-dimensional (2D) quantum wells in the V-grooved quantum wire structure. Photoluminescence measurement of the implanted samples shows the obvious blueshift of the interband transition energy while quantum wire is not influenced by implantation. So the selective implantation method has been demonstrated in this article as a useful technique to isolate the energy levels of quantum wire structure from its neighbor 2D structures, which is preferred for the optoelectronic device application of quantum wire.",

author = "Xingquan Liu and Wei Lu and Xiaoshuang Chen and Shen, {S. C.} and Tan, {H. H.} and S. Yuan and C. Jagadish and Johnston, {M. B.} and Dao, {L. V.} and M. Gal and J. Zou and Cockayne, {D. J.H.}",

year = "2000",

month = feb,

doi = "10.1063/1.372051",

language = "English",

volume = "87",

pages = "1566--1568",

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publisher = "American Institute of Physics",

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T1 - Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

AU - Liu, Xingquan

AU - Lu, Wei

AU - Chen, Xiaoshuang

AU - Shen, S. C.

AU - Tan, H. H.

AU - Yuan, S.

AU - Jagadish, C.

AU - Johnston, M. B.

AU - Dao, L. V.

AU - Gal, M.

AU - Zou, J.

AU - Cockayne, D. J.H.

PY - 2000/2

Y1 - 2000/2

N2 - Intermixing induced by selective implantation was used to modify the two-dimensional (2D) quantum wells in the V-grooved quantum wire structure. Photoluminescence measurement of the implanted samples shows the obvious blueshift of the interband transition energy while quantum wire is not influenced by implantation. So the selective implantation method has been demonstrated in this article as a useful technique to isolate the energy levels of quantum wire structure from its neighbor 2D structures, which is preferred for the optoelectronic device application of quantum wire.

AB - Intermixing induced by selective implantation was used to modify the two-dimensional (2D) quantum wells in the V-grooved quantum wire structure. Photoluminescence measurement of the implanted samples shows the obvious blueshift of the interband transition energy while quantum wire is not influenced by implantation. So the selective implantation method has been demonstrated in this article as a useful technique to isolate the energy levels of quantum wire structure from its neighbor 2D structures, which is preferred for the optoelectronic device application of quantum wire.

UR - http://www.scopus.com/inward/record.url?scp=0040245041&partnerID=8YFLogxK

U2 - 10.1063/1.372051

DO - 10.1063/1.372051

M3 - Article

SN - 0021-8979

VL - 87

SP - 1566

EP - 1568

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

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