Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing

X. Q. Liu; N. Li; W. Lu; N. Li; X. Z. Yuan; S. C. Shen; L. Fu; H. H. Tan; C. Jagadish

doi:10.1143/jjap.39.1687

Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing

X. Q. Liu^*, N. Li, W. Lu, N. Li, X. Z. Yuan, S. C. Shen, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Proton implantation induced intermixing was used to tune the quantum well infrared photo-detector (QWIP) response wavelength, which may provide a method of fabricating two-color QWIP devices. Obvious red shift of response wavelength as large as 0.6 μm was observed relative to the reference sample that was annealed without implantation, from 7.7 μm to 8.3 μm. Two response wavelengths for the highest-dose implanted sample were observed in the photo-current spectra. In the highest dose case (5 × 10¹⁵ H/cm²), the dark current increased by an order of magnitude and peak responsivity decreased by a factor of 3 for the implanted and annealed sample. This has been attributed to the raising of the ground state energy level in the intermixed quantum well and residual damage in the implanted and annealed QWIPs.

Original language	English
Pages (from-to)	1687-1689
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.39.1687
Publication status	Published - 2000

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Liu, X. Q., Li, N., Lu, W., Li, N., Yuan, X. Z., Shen, S. C., Fu, L., Tan, H. H., & Jagadish, C. (2000). Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(4 A), 1687-1689. https://doi.org/10.1143/jjap.39.1687

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title = "Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing",

abstract = "Proton implantation induced intermixing was used to tune the quantum well infrared photo-detector (QWIP) response wavelength, which may provide a method of fabricating two-color QWIP devices. Obvious red shift of response wavelength as large as 0.6 μm was observed relative to the reference sample that was annealed without implantation, from 7.7 μm to 8.3 μm. Two response wavelengths for the highest-dose implanted sample were observed in the photo-current spectra. In the highest dose case (5 × 1015 H/cm2), the dark current increased by an order of magnitude and peak responsivity decreased by a factor of 3 for the implanted and annealed sample. This has been attributed to the raising of the ground state energy level in the intermixed quantum well and residual damage in the implanted and annealed QWIPs.",

keywords = "Implantation, Intermixing, Quantum well, Wavelength tuning",

author = "Liu, {X. Q.} and N. Li and W. Lu and N. Li and Yuan, {X. Z.} and Shen, {S. C.} and L. Fu and Tan, {H. H.} and C. Jagadish",

year = "2000",

doi = "10.1143/jjap.39.1687",

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T1 - Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing

AU - Liu, X. Q.

AU - Li, N.

AU - Lu, W.

AU - Li, N.

AU - Yuan, X. Z.

AU - Shen, S. C.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2000

Y1 - 2000

N2 - Proton implantation induced intermixing was used to tune the quantum well infrared photo-detector (QWIP) response wavelength, which may provide a method of fabricating two-color QWIP devices. Obvious red shift of response wavelength as large as 0.6 μm was observed relative to the reference sample that was annealed without implantation, from 7.7 μm to 8.3 μm. Two response wavelengths for the highest-dose implanted sample were observed in the photo-current spectra. In the highest dose case (5 × 1015 H/cm2), the dark current increased by an order of magnitude and peak responsivity decreased by a factor of 3 for the implanted and annealed sample. This has been attributed to the raising of the ground state energy level in the intermixed quantum well and residual damage in the implanted and annealed QWIPs.

AB - Proton implantation induced intermixing was used to tune the quantum well infrared photo-detector (QWIP) response wavelength, which may provide a method of fabricating two-color QWIP devices. Obvious red shift of response wavelength as large as 0.6 μm was observed relative to the reference sample that was annealed without implantation, from 7.7 μm to 8.3 μm. Two response wavelengths for the highest-dose implanted sample were observed in the photo-current spectra. In the highest dose case (5 × 1015 H/cm2), the dark current increased by an order of magnitude and peak responsivity decreased by a factor of 3 for the implanted and annealed sample. This has been attributed to the raising of the ground state energy level in the intermixed quantum well and residual damage in the implanted and annealed QWIPs.

KW - Implantation

KW - Intermixing

KW - Quantum well

KW - Wavelength tuning

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 A

ER -

Wavelength tuning of GaAs/AlGaAs quantum-well infrared photo-detectors by proton implantation induced intermixing

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