Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion

Xingquan Liu; Ning Li; Xiaoshuang Chen; Wei Lu; Wenlan Xu; Xianzhang Yuan; Na Li; S. C. Shen; Shu Yuan'; Hark Hoe Tan'; C. Jagadish

doi:10.1143/jjap.38.5044

Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion

Xingquan Liu^*, Ning Li, Xiaoshuang Chen, Wei Lu, Wenlan Xu, Xianzhang Yuan, Na Li, S. C. Shen, Shu Yuan', Hark Hoe Tan', C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Thermal interdiffusion is used to shift peak response wavelength of quantum well infrared photodetectors. A maximum 0.7μm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red-shift is attributed to Si-dopant enhanced intermixing. Dark current is decreased about 5 times for 900°C annealed sample than as-grown one, which is attributed to Si-dopant out-diffusion. The experimentally observed reduction in the responsivity is attributed to out-diffusion of Si-dopant and degradation of interfaces.

Original language	English
Pages (from-to)	5044-5045
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	9 A
DOIs	https://doi.org/10.1143/jjap.38.5044
Publication status	Published - 1999

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title = "Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion",

abstract = "Thermal interdiffusion is used to shift peak response wavelength of quantum well infrared photodetectors. A maximum 0.7μm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red-shift is attributed to Si-dopant enhanced intermixing. Dark current is decreased about 5 times for 900°C annealed sample than as-grown one, which is attributed to Si-dopant out-diffusion. The experimentally observed reduction in the responsivity is attributed to out-diffusion of Si-dopant and degradation of interfaces.",

keywords = "Gaas/aigaas quantum well, Infrared, Interdiffusion wavelength tuning, Photodector",

author = "Xingquan Liu and Ning Li and Xiaoshuang Chen and Wei Lu and Wenlan Xu and Xianzhang Yuan and Na Li and Shen, {S. C.} and Shu Yuan' and Tan', {Hark Hoe} and C. Jagadish",

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doi = "10.1143/jjap.38.5044",

language = "English",

volume = "38",

pages = "5044--5045",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion

AU - Liu, Xingquan

AU - Li, Ning

AU - Chen, Xiaoshuang

AU - Lu, Wei

AU - Xu, Wenlan

AU - Yuan, Xianzhang

AU - Li, Na

AU - Shen, S. C.

AU - Yuan', Shu

AU - Tan', Hark Hoe

AU - Jagadish, C.

PY - 1999

Y1 - 1999

N2 - Thermal interdiffusion is used to shift peak response wavelength of quantum well infrared photodetectors. A maximum 0.7μm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red-shift is attributed to Si-dopant enhanced intermixing. Dark current is decreased about 5 times for 900°C annealed sample than as-grown one, which is attributed to Si-dopant out-diffusion. The experimentally observed reduction in the responsivity is attributed to out-diffusion of Si-dopant and degradation of interfaces.

AB - Thermal interdiffusion is used to shift peak response wavelength of quantum well infrared photodetectors. A maximum 0.7μm red-shift for 900°C annealed devices compared with as-grown one has been obtained. Error function potential profile is used to calculate the intermixing process. The large red-shift is attributed to Si-dopant enhanced intermixing. Dark current is decreased about 5 times for 900°C annealed sample than as-grown one, which is attributed to Si-dopant out-diffusion. The experimentally observed reduction in the responsivity is attributed to out-diffusion of Si-dopant and degradation of interfaces.

KW - Gaas/aigaas quantum well

KW - Infrared

KW - Interdiffusion wavelength tuning

KW - Photodector

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U2 - 10.1143/jjap.38.5044

DO - 10.1143/jjap.38.5044

M3 - Article

SN - 0021-4922

VL - 38

SP - 5044

EP - 5045

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 9 A

ER -

Wavelength tuning of GaAs/AlGaAs quantum-well infrared photodetectors by thermal interdiffusion

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