ZnS branched architectures as optoelectronic devices and field emitters

Zhi Gang Chen; Lina Cheng; Hong Yi Xu; Ji Zi Liu; Jin Zou; Takashi Sekiguchi; Gao Qing Lu; Hui Ming Cheng

doi:10.1002/adma.200903643

ZnS branched architectures as optoelectronic devices and field emitters

Zhi Gang Chen^*, Lina Cheng, Hong Yi Xu, Ji Zi Liu, Jin Zou, Takashi Sekiguchi, Gao Qing Lu, Hui Ming Cheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

105 Citations (Scopus)

Abstract

(Figure Presented) A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

Original language	English
Pages (from-to)	2376-2380
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	21
DOIs	https://doi.org/10.1002/adma.200903643
Publication status	Published - 4 Jun 2010
Externally published	Yes

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title = "ZnS branched architectures as optoelectronic devices and field emitters",

abstract = "(Figure Presented) A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.",

author = "Chen, {Zhi Gang} and Lina Cheng and Xu, {Hong Yi} and Liu, {Ji Zi} and Jin Zou and Takashi Sekiguchi and Lu, {Gao Qing} and Cheng, {Hui Ming}",

year = "2010",

month = jun,

day = "4",

doi = "10.1002/adma.200903643",

language = "English",

volume = "22",

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journal = "Advanced Materials",

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TY - JOUR

T1 - ZnS branched architectures as optoelectronic devices and field emitters

AU - Chen, Zhi Gang

AU - Cheng, Lina

AU - Xu, Hong Yi

AU - Liu, Ji Zi

AU - Zou, Jin

AU - Sekiguchi, Takashi

AU - Lu, Gao Qing

AU - Cheng, Hui Ming

PY - 2010/6/4

Y1 - 2010/6/4

N2 - (Figure Presented) A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

AB - (Figure Presented) A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

UR - http://www.scopus.com/inward/record.url?scp=77953146293&partnerID=8YFLogxK

U2 - 10.1002/adma.200903643

DO - 10.1002/adma.200903643

M3 - Article

C2 - 20432475

AN - SCOPUS:77953146293

SN - 0935-9648

VL - 22

SP - 2376

EP - 2380

JO - Advanced Materials

JF - Advanced Materials

IS - 21

ER -

ZnS branched architectures as optoelectronic devices and field emitters

Abstract

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